BDX54C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 8A volts.
BDX54C-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDX54C-S Applications
There are a lot of Bourns Inc. BDX54C-S applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
