2SC5868TLR Overview
DC current gain in this device equals 180 @ 50mA 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 75mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.In this part, there is a transition frequency of 300MHz.An input voltage of 60V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SC5868TLR Features
the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLR Applications
There are a lot of ROHM Semiconductor 2SC5868TLR applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
