STN2580 Overview
In this device, the DC current gain is 60 @ 250mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.The breakdown input voltage is 400V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
STN2580 Features
the DC current gain for this device is 60 @ 250mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 9V
STN2580 Applications
There are a lot of STMicroelectronics STN2580 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
