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2SC5964-S-TD-E

2SC5964-S-TD-E

2SC5964-S-TD-E

ON Semiconductor

2SC5964-S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC5964-S-TD-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
PackagingTape & Reel (TR)
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.3W
Power - Max 1.3W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 290mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 290mV @ 100mA, 2A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 380MHz
RoHS StatusROHS3 Compliant
In-Stock:57009 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.914252$0.914252
10$0.862502$8.62502
100$0.813681$81.3681
500$0.767624$383.812
1000$0.724173$724.173

2SC5964-S-TD-E Product Details

2SC5964-S-TD-E Overview


DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 100mA, 2A.During maximum operation, collector current can be as low as 3A volts.

2SC5964-S-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 290mV @ 100mA, 2A

2SC5964-S-TD-E Applications


There are a lot of ON Semiconductor 2SC5964-S-TD-E applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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