2SB1132T100P Overview
In this device, the DC current gain is 82 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.150MHz is present in the transition frequency.A maximum collector current of 1A volts is possible.
2SB1132T100P Features
the DC current gain for this device is 82 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100P Applications
There are a lot of ROHM Semiconductor 2SB1132T100P applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
