MPSA77G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.
MPSA77G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA77G Applications
There are a lot of ON Semiconductor MPSA77G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver