BC558BZL1G Overview
This device has a DC current gain of 180 @ 2mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 360MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC558BZL1G Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz
BC558BZL1G Applications
There are a lot of ON Semiconductor BC558BZL1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
