2SAR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -120mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -200mA is necessary for high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.In this part, there is a transition frequency of 350MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.In extreme cases, the collector current can be as low as 200mA volts.
2SAR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522MT2L Applications
There are a lot of ROHM Semiconductor 2SAR522MT2L applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
