BC847T,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC847T,115 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
BC847T,115 Applications
There are a lot of NXP USA Inc. BC847T,115 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
