2N5210TF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100μA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 30MHz in the part.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5210TF Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
a transition frequency of 30MHz
2N5210TF Applications
There are a lot of Rochester Electronics, LLC 2N5210TF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
