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MMBT5087

MMBT5087

MMBT5087

ON Semiconductor

MMBT5087 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5087 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-100mA
Frequency 40MHz
Base Part Number MMBT5087
Number of Elements 1
Element ConfigurationSingle
Power Dissipation350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage-300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -3V
hFE Min 250
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:288573 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.03000$0.03
500$0.0297$14.85
1000$0.0294$29.4
1500$0.0291$43.65
2000$0.0288$57.6
2500$0.0285$71.25

MMBT5087 Product Details

MMBT5087 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100μA 5V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 1mA, 10mA.Keeping the emitter base voltage at -3V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.In the part, the transition frequency is 40MHz.Breakdown input voltage is 50V volts.Collector current can be as low as 100mA volts at its maximum.

MMBT5087 Features


the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -3V
the current rating of this device is -100mA
a transition frequency of 40MHz

MMBT5087 Applications


There are a lot of ON Semiconductor MMBT5087 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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