Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJF31CG

MJF31CG

MJF31CG

ON Semiconductor

MJF31CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJF31CG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureUL RECOGNIZED
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 16.12mm
Length 10.63mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5918 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.10000$1.1
50$0.93000$46.5
100$0.76390$76.39
500$0.63102$315.51

MJF31CG Product Details

MJF31CG Overview


This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 3MHz.The maximum collector current is 3A volts.

MJF31CG Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

MJF31CG Applications


There are a lot of ON Semiconductor MJF31CG applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News