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RJK6006DPD-00#J2

RJK6006DPD-00#J2

RJK6006DPD-00#J2

Renesas Electronics America

RJK6006DPD Series 600 V 1.6 Ohm N Channel High Speed Power Switching MOSFET

SOT-23

RJK6006DPD-00#J2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
Power Dissipation-Max 77.6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 5A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3669 items

About RJK6006DPD-00#J2

The RJK6006DPD-00#J2 from Renesas Electronics America is a high-performance microcontroller designed for a wide range of embedded applications. This component features RJK6006DPD Series 600 V 1.6 Ohm N Channel High Speed Power Switching MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RJK6006DPD-00#J2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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