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IRF6646TR1

IRF6646TR1

IRF6646TR1

Infineon Technologies

MOSFET N-CH 80V 12A DIRECTFET

SOT-23

IRF6646TR1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MN
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:3252 items

About IRF6646TR1

The IRF6646TR1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 80V 12A DIRECTFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6646TR1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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