Name: AUIRLR3636
Brand: Infineon Technologies
SKU: AUIRLR3636
Availability: InStock

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AUIRLR3636

Manufacturer part number:AUIRLR3636

Manufacturer:Infineon Technologies

Description:AUIRLR3636 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRLR3636 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	6.8MOhm
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	AUIRLR3636
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	143W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	143W
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 4.5V
Rise Time	216ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	69 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	1V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	99A
Drain to Source Breakdown Voltage	60V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AUIRLR3636 Product Details

AUIRLR3636 Description

AUIRLR3636 HEXFET? Power MOSFET, which was created especially for automotive applications, makes use of cutting-edge manufacturing methods to deliver incredibly low on-resistance per silicon area. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design.

These characteristics work together to provide a highly effective and dependable gadget that may be used in a multitude of applications, including automotive ones.