Name: HAT2165HWS-E
Brand: Renesas Electronics America
SKU: HAT2165HWS-E
Availability: InStock

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HAT2165HWS-E

Manufacturer part number:HAT2165HWS-E

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.3m Ω @ 27.5A, 10V ±20V 5180pF @ 10V 33nC @ 4.5V 30V SC-100, SOT-669

Case Package:SOT-23

Datasheet:HAT2165HWS-E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	30W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	55A Ta
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	RoHS Compliant

HAT2165HWS-E Product Details

HAT2165HWS-E Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5180pF @ 10V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.