IRF5806 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF5806 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Surface Mount
YES
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Configuration
Single
Power Dissipation-Max
2W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
86m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
594pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
11.4nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
4A
RoHS Status
Non-RoHS Compliant
In-Stock:2607 items
IRF5806 Product Details
IRF5806 Description
International Rectifier's new trench HEXFET? Power MOSFETs use cutting-edge manufacturing processes to produce incredibly low on-resistance per silicon area. The designer is given an incredibly effective and dependable device to employ in battery and load management applications because to this benefit and the ruggedized device design that HEXFET powerMOSFETs are widely renowned for.
IRF5806 Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
IRF5806 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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