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SPP11N60CFDXKSA1

SPP11N60CFDXKSA1

SPP11N60CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-220

SOT-23

SPP11N60CFDXKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2008
Series CoolMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:4597 items

About SPP11N60CFDXKSA1

The SPP11N60CFDXKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 11A TO-220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SPP11N60CFDXKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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