TIS75 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
TIS75 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Max Power Dissipation
350mW
Current Rating
20mA
Base Part Number
TIS75
Element Configuration
Single
Power Dissipation
350mW
Output Power
350mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
18pF @ 10V VGS
Breakdown Voltage
-30V
Drain to Source Voltage (Vdss)
30V
Continuous Drain Current (ID)
80mA
Gate to Source Voltage (Vgs)
-30V
Drain to Source Resistance
60Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
8mA @ 15V
Voltage - Cutoff (VGS off) @ Id
800mV @ 4nA
Resistance - RDS(On)
60Ohm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4560 items
TIS75 Product Details
TIS75 Description
TIS75 is an N-Channel General Purpose Amplifier, designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. Sourced from process 54.
TIS75 Features
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Number of Pins: 3
Operating Temperature: -55°C~150°C TJ
Packaging: Bulk
Published: 2004
TIS75 Applications
Low-level analog switching
Sample and hold circuits
Chopper stabilized amplifiers
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