2N5460G Description
2N5460G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes 2N5460G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor 2N5460G has the common source configuration.
2N5460G Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
2N5460G Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
