BFT46,215 Description
BFT46,215 is a type of symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low-level general-purpose amplifiers in thick and thin-film circuits due to its specific characteristics. It is available in the SOT23 package for the purpose of saving board space.
BFT46,215 Features
Available in the SOT23 package
Drain-source voltage： 25 V
Total power dissipation up to Tamb = 40 ℃
Junction temperature: 150 ℃
BFT46,215 Applications
Low-level general purpose amplifiers
