TIG064E8-TL-H

TIG064E8-TL-H Description

The TIG064E8-TL-H is an N-Channel IGBT. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

TIG064E8-TL-H Features

• Built-in Gate-to-Emitter protection diode

• Mounting Height 0.9mm, Mounting Area 8.12mm2

• dv / dt guarantee*

• Halogen free compliance

• Low-saturation voltage

• Low voltage drive (2.5V)

• Enhansment type

TIG064E8-TL-H Applications

• Light-Controlling Flash Applications

• Switched Mode Power Supply

• Uninterruptible Power Supply

• AC and DC motor drives

• Chopper and Inverters