HGTG27N120BN Description
The HGTG27N120BN is an IGBT with a NonPunch Through (NPT) design. The MOS gated high voltage switching IGBT family has a new member. IGBTs are a hybrid of MOSFETs and bipolar transistors that combine the best of both worlds. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
HGTG27N120BN Features
?TC = 25oC, 72A, 1200V
?SOA Switching Capability of 1200V
?At TJ = 150°C, a typical fall time is 140ns.
?Rat ing in a short circuit
?Low Loss Conductivity
?SPICE Model for Thermal Impedance
HGTG27N120BN Applications
HGTG27N120BN is intended for general use and can be used in a variety of situations.
