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SS9013GTA

SS9013GTA

SS9013GTA

ON Semiconductor

SS9013GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SS9013GTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number SS9013
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 112 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 500mA
In-Stock:2253 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.042315$0.042315
500$0.031114$15.557
1000$0.025928$25.928
2000$0.023787$47.574
5000$0.022231$111.155
10000$0.020680$206.8
15000$0.020000$300
50000$0.019666$983.3

SS9013GTA Product Details

SS9013GTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 112 @ 50mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 50mA, 500mA.Product package TO-92-3 comes from the supplier.This device displays a 20V maximum voltage - Collector Emitter Breakdown.

SS9013GTA Features


the DC current gain for this device is 112 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the supplier device package of TO-92-3

SS9013GTA Applications


There are a lot of ON Semiconductor SS9013GTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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