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SMMBT2369LT1G

SMMBT2369LT1G

SMMBT2369LT1G

ON Semiconductor

SMMBT2369LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBT2369LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation225mW
Terminal Position DUAL
Terminal FormGULL WING
Pin Count3
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage15V
Collector Base Voltage (VCBO) 40V
Turn Off Time-Max (toff) 18ns
Turn On Time-Max (ton) 12ns
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4554 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.832482$0.832482
10$0.785360$7.8536
100$0.740906$74.0906
500$0.698968$349.484
1000$0.659403$659.403

SMMBT2369LT1G Product Details

SMMBT2369LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 200mA volts can be achieved.

SMMBT2369LT1G Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA

SMMBT2369LT1G Applications


There are a lot of ON Semiconductor SMMBT2369LT1G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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