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JAN2N918

JAN2N918

JAN2N918

Microsemi Corporation

JAN2N918 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N918 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-72-3 Metal Can
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/301
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation200mW
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
Reference Standard MIL-19500/301H
JESD-30 Code O-MBCY-W4
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA 1V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 50mA
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3pF
RoHS StatusNon-RoHS Compliant
In-Stock:1743 items

JAN2N918 Product Details

JAN2N918 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3mA 1V.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A maximum collector current of 50mA volts can be achieved.

JAN2N918 Features


the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA

JAN2N918 Applications


There are a lot of Microsemi Corporation JAN2N918 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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