BCW66KE6359HTMA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 50mA, 500mA.SOT-23-3 is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BCW66KE6359HTMA1 Features
the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the supplier device package of SOT-23-3
BCW66KE6359HTMA1 Applications
There are a lot of Infineon Technologies BCW66KE6359HTMA1 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
