SI4532DY Description
These double N-channel and P-channel enhanced mode power field effect transistors are produced using on Semiconductor's PRPROPRORT, high cell density, and DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
SI4532DY Features
N-Channel 3.9A, 30V.RDS(ON) = 0.065? @VGS = 10V
RDS(ON) = 0.095? @VGS = 4.5V.
P-Channel -3.5A,-30V.RDS(ON)= 0.085? @VGS = -10V
RDS(ON)= 0.190 ? @VGS = -4.5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
package.
SI4532DY Applications
laptop power management
other battery-powered circuits
