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SSM6N35FE,LM

SSM6N35FE,LM

SSM6N35FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.18A ES6

SOT-23

SSM6N35FE,LM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation150mW
Reach Compliance Code unknown
Base Part Number SSM6N35
Power - Max 150mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3 Ω @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 180mA
FET Feature Logic Level Gate
RoHS StatusRoHS Compliant
In-Stock:20850 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.628538$0.628538
10$0.592960$5.9296
100$0.559396$55.9396
500$0.527732$263.866
1000$0.497861$497.861

About SSM6N35FE,LM

The SSM6N35FE,LM from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2N-CH 20V 0.18A ES6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSM6N35FE,LM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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