Name: CSD88539NDT
Brand: Texas Instruments
SKU: CSD88539NDT
Price: 1.05000 USD
Availability: InStock

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CSD88539NDT

Manufacturer part number:CSD88539NDT

Manufacturer:Texas Instruments

Description:TEXAS INSTRUMENTS CSD88539NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V

Case Package:SOT-23

Datasheet:CSD88539NDT Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	540.001716mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD88539
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	15A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.3A
Drain-source On Resistance-Max	0.034Ohm
Pulsed Drain Current-Max (IDM)	46A
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.75mm
Length	4.9mm
Width	3.91mm
Thickness	1.58mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About CSD88539NDT

The CSD88539NDT from Texas Instruments is a high-performance microcontroller designed for a wide range of embedded applications. This component features TEXAS INSTRUMENTS CSD88539NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the CSD88539NDT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.