SKW20N60FKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
SKW20N60FKSA1 Features
· 75% lower Eoff compared to previous generation
combined with low conduction losses
· Short circuit withstand time – 10 ms
· Designed for:
- Motor controls
- Inverter
· NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
· Very soft, fast recovery anti-parallel Emitter Controlled
Diode
· Pb-free lead plating; RoHS compliant
· Qualified according to JEDEC1
for target applications
SKW20N60FKSA1 Applications
? Appliance Drives
? Inverters
? UPS
