FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
