SGS6N60UFDTU Description
SGS6N60UFDTU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGS6N60UFDTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGS6N60UFDTU has the common source configuration.
SGS6N60UFDTU Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SGS6N60UFDTU Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
