SGP10N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGP10N60RUFDTU Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
208W
Current Rating
10A
Base Part Number
SG*10N60
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
16A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Max Breakdown Voltage
600V
Turn On Time
49 ns
Test Condition
300V, 10A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 10A
Turn Off Time-Nom (toff)
284 ns
Gate Charge
30nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
15ns/36ns
Switching Energy
141μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
8V
Fall Time-Max (tf)
220ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3161 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.893471
$0.893471
10
$0.842897
$8.42897
100
$0.795186
$79.5186
500
$0.750175
$375.0875
1000
$0.707712
$707.712
SGP10N60RUFDTU Product Details
SGP10N60RUFDTU Description
SGP10N60RUFDTU is a single IGBT with a Collector-Emitter Breakdown Voltage of 600V from Infineon Technologies. SGP10N60RUFDTU operates between -55°C~150°C TJ, and its Max Collector Current is 16A. The SGP10N60RUFDTU has 3 pins and it is available in a Tube packaging way. SGP10N60RUFDTU has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
SGP10N60RUFDTU Features
Additional Feature: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Test Condition: 300V, 10A, 20 Ω, 15V
Switching Energy: 141μJ (on), 215μJ (off)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Polarity/Channel Type: N-CHANNEL
SGP10N60RUFDTU Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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