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IRGP4063-EPBF

IRGP4063-EPBF

IRGP4063-EPBF

Infineon Technologies

IRGP4063-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4063-EPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation330W
Number of Elements 1
Rise Time-Max 56ns
Element ConfigurationSingle
Power Dissipation330W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.65V
Turn On Time100 ns
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Turn Off Time-Nom (toff) 210 ns
IGBT Type Trench
Gate Charge95nC
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 46ns
Height 20.7mm
Length 15.87mm
Width 5.13mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3231 items

IRGP4063-EPBF Product Details

IRGP4063-EPBF Description


IRGP4063-EPBF, manufactured by Infineon Technologies. Its category belongs to IGBT Transistors. It is applied to many fields, like Communications equipment Datacom modules Enterprise systems Enterprise projectors Personal electronics Portable electronics . And the main parameters of this part is IGBT Transistors 600V 96A. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRGP4063-EPBF Features


  • Square RBSOA

  • Lead-Free Package

  • Low switching losses

  • 5 μS short circuit SOA

  • Tight parameter distribution

  • 100% of the parts tested for ILM

  • Low VCE (ON) Trench IGBT Technology

  • Maximum Junction temperature 175 °C

  • Positive VCE (ON) Temperature coefficient



IRGP4063-EPBF Applications


  • Enterprise systems

  • Personal electronics

  • Communications equipment


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