RFP50N05L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP50N05L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
110W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
140nC @ 10V
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
4V 5V
Vgs (Max)
±10V
In-Stock:2877 items
RFP50N05L Product Details
RFP50N05L Description
The RFP50N06 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
RFP50N05L Features
Peak Current vs Pulse Width Curve
UIS Rating Curve
175°C Operating Temperature
50A, 60V
rDS(ON)= 0.022Ω
Temperature Compensating PSPICE Model
RFP50N05L Applications
Other Industrial
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