NDS336P Description
NDS336P is a -20v P-Channel Logic Level Enhancement Mode Field Effect Transistor. SuperSOT?-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. The NDS336P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery-powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
NDS336P Features
-1.2 A, -20 V, RDS(ON) = 0.27 W @ VGS= -2.7 V
RDS(ON) = 0.2 W @ VGS = -4.5 V.
Very low-level gate drive requirements allow direct operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry-standard SOT-23 Surface Mount package.
NDS336P Applications
