Name: NDC651N
Brand: ON Semiconductor
SKU: NDC651N
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SuperSOT™-6
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.6W Ta
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	60mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	20V

NDC651N Product Details

NDC651N Description

This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. The goal of this extremely high density method is to reduce on-state resistance. These components are especially well suited for low voltage applications in laptops, cell phones, PCMICA cards, and other battery-operated circuits where fast switching and minimal in-line power loss are required in a very compact shape surface mount package.

NDC651N Features

3.2A, 30V. RDS(ON) = 0.09W @ VGS = 4.5V
RDS(ON) = 0.06W @ VGS = 10V.
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.