RFD16N05LSM Description
These are N-channel logic level power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for the use of logic level (5V) drivers in applications such as programmable controllers, automotive switches, switching regulators, switching converters, motor relay drivers, and bipolar transistor emitter switches. This performance is achieved through a special gate oxide design that provides fully rated conductance in the gate bias range from 3V to 5V, which facilitates true switching power control directly from the logic supply voltage. Its predecessor was developmental TA09871.
RFD16N05LSM Features
16A, 50V
rDS(ON)= 0.047Ω
UIS SOA Rating Curve (Single Pulse)
Design Optimized for 5V Gate Drives
Can be Driven Directly from CMOS, NMOS, TTL Circuits
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Devicee
Related Literature
?- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
RFD16N05LSM Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
