PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 200MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor PN2907ABU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
