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2SC5662T2LP

2SC5662T2LP

2SC5662T2LP

ROHM Semiconductor

2SC5662T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC5662T2LP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 11V
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC5662
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product3.2 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 11V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage11V
Transition Frequency 3200MHz
Collector Emitter Saturation Voltage500mV
Max Breakdown Voltage 11V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
Highest Frequency Band S B
Collector-Base Capacitance-Max 1.5pF
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13680 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.198360$0.19836
10$0.187132$1.87132
100$0.176540$17.654
500$0.166547$83.2735
1000$0.157120$157.12

2SC5662T2LP Product Details

2SC5662T2LP Overview


In this device, the DC current gain is 82 @ 5mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 3V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (50mA).3200MHz is present in the transition frequency.This device can take an input voltage of 11V volts before it breaks down.Collector current can be as low as 50mA volts at its maximum.

2SC5662T2LP Features


the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz

2SC5662T2LP Applications


There are a lot of ROHM Semiconductor 2SC5662T2LP applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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