Power MOSFET Dual N-Channel 60 V 26 A 28m Ohm 8-Pin DFN T/R
SOT-23
NVMFD5C680NLWFT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
3W Ta 19W Tc
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 13μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.5A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs
2nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
FET Feature
Standard
RoHS Status
ROHS3 Compliant
In-Stock:4567 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFD5C680NLWFT1G Product Details
The ON Semiconductor NVMFD5C680NLWFT1G is a dual N-Channel Power MOSFET array designed for high-power applications. This device features a maximum drain-source voltage of 60V, a maximum drain current of 26A, and a low on-resistance of 28mΩ. It is housed in an 8-pin DFN package and is suitable for use in a wide range of applications, including power management, motor control, and power conversion. The NVMFD5C680NLWFT1G is designed to provide superior performance and reliability in high-power applications. It is RoHS compliant and is backed by ON Semiconductor's industry-leading warranty.
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