NVD6495NLT4G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 79 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.024nF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 80A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NVD6495NLT4G Features
the avalanche energy rating (Eas) is 79 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 80A.
NVD6495NLT4G Applications
There are a lot of ON Semiconductor
NVD6495NLT4G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
