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NTZD3155CT2G

NTZD3155CT2G

NTZD3155CT2G

ON Semiconductor

NTZD3155CT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTZD3155CT2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation250mW
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating540mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NTZD3155C
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation250mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C 540mA 430mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time12ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 19 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 540mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18866 items

Pricing & Ordering

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NTZD3155CT2G Product Details

NTZD3155CT2G Description


A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis.


NTZD3155CT2G Features


? Leading Trench Technology for Low RDS(on) Performance

? High Efficiency System Performance

? Low Threshold Voltage

? ESD Protected Gate

? Small Footprint 1.6 x 1.6 mm

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant


NTZD3155CT2G Applications


? DC?DC Conversion Circuits

? Load/Power Switching with Level Shift

? Single or Dual Cell Li?Ion Battery Operated Systems

? High Speed Circuits

? Cell Phones, MP3s, Digital Cameras, and PDAs





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