FDC8602 Description
The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
FDC8602 Features
Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC8602 Applications
Distribution
