Name: FF11MR12W1M1B11BOMA1
Brand: Infineon Technologies
SKU: FF11MR12W1M1B11BOMA1
Price: 230.98000 USD
Availability: InStock

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FF11MR12W1M1B11BOMA1

Manufacturer part number:FF11MR12W1M1B11BOMA1

Manufacturer:Infineon Technologies

Description:FF11MR12W1M1B11BOMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FF11MR12W1M1B11BOMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Manufacturer Package Identifier	AG-EASY1BM-2
Operating Temperature	-40°C~150°C TJ
Packaging	Tray
Published	2008
Series	CoolSiC™+
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	18
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X18
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	20mW
Case Connection	ISOLATED
Turn On Delay Time	25.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 100A, 15V
Vgs(th) (Max) @ Id	5.55V @ 40mA
Input Capacitance (Ciss) (Max) @ Vds	7950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	250nC @ 15V
Drain to Source Voltage (Vdss)	1200V 1.2kV
Turn-Off Delay Time	64.3 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Silicon Carbide (SiC)
Height	12.35mm
RoHS Status	ROHS3 Compliant

FF11MR12W1M1B11BOMA1 Product Details

FF11MR12W1M1B11BOMA1 Description

Trench MOSFET FF11MR12W1M1B11BOMA1Construction Similar to any other MOSFET, a trench MOSFET cell contains the drain, gate, source, body and the channel regions but exhibits a vertical direction of current flow. All the cells are connected to work in parallel in order to reduce the value of RON.