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NTR4503NT1G

NTR4503NT1G

NTR4503NT1G

ON Semiconductor

NTR4503NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTR4503NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 85MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating2.5A
Pin Count3
Number of Elements 1
Power Dissipation-Max 420mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation730mW
Turn On Delay Time5.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 24V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time6.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 13.6 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 1.75V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.75 V
Feedback Cap-Max (Crss) 25 pF
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14853 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.51000$0.51
500$0.5049$252.45
1000$0.4998$499.8
1500$0.4947$742.05
2000$0.4896$979.2
2500$0.4845$1211.25

NTR4503NT1G Product Details

NTR4503NT1G Description


NTR4503NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. Moreover, it is well suited for a low-voltage gate drive based on rated 4.5 V. Its SOT-23 package is used to save board space.



NTR4503NT1G Features


  • Low RDS (on)

  • High efficiency

  • Low-voltage gate drive

  • Leading planar technology

  • Available in the SOT-23 surface-mount package



NTR4503NT1G Applications


  • DC?DC conversion

  • Load/power switch for portables

  • Load/power switch for computing


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