Name: AUIRF4104
Brand: Infineon Technologies
SKU: AUIRF4104
Price: 1.15000 USD
Availability: InStock

new-10%

AUIRF4104

Manufacturer part number:AUIRF4104

Manufacturer:Infineon Technologies

Description:AUIRF4104 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF4104 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0055Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	470A
Avalanche Energy Rating (Eas)	220 mJ
Height	9.017mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF4104 Product Details

AUIRF4104 Description

AUIRF4104 is a type of HEXFET? Power MOSFET developed by Infineon Technologies based on the latest processing techniques. It is specifically optimized for Automotive applications and a wide variety of other applications due to its extremely low on-resistance per silicon area, 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. The AUIRF4104 MOSFET is available in the TO-220AB to meet the board space requirements.