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BUK9Y30-75B,115

BUK9Y30-75B,115

BUK9Y30-75B,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 28m Ω @ 15A, 10V ±15V 2070pF @ 25V 19nC @ 5V SC-100, SOT-669

SOT-23

BUK9Y30-75B,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface MountYES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, TrenchMOS™
Published 2008
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 85W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation85W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V
Rise Time106ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 34A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage75V
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 78 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6034 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BUK9Y30-75B,115 Product Details

BUK9Y30-75B,115 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 78 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2070pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 34A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 51 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 15V.Powered by 75V, it supports the maximal dual supply voltage.By using drive voltage (5V), this device helps reduce its overall power consumption.

BUK9Y30-75B,115 Features


the avalanche energy rating (Eas) is 78 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 51 ns


BUK9Y30-75B,115 Applications


There are a lot of Nexperia USA Inc.
BUK9Y30-75B,115 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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