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NTMS10P02R2

NTMS10P02R2

NTMS10P02R2

ON Semiconductor

NTMS10P02R2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTMS10P02R2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating-10A
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3640pF @ 16V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Rise Time40ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage -20V
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:3802 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.524049$0.524049
10$0.494385$4.94385
100$0.466401$46.6401
500$0.440001$220.0005
1000$0.415096$415.096

NTMS10P02R2 Product Details

NTMS10P02R2 Description


NTMS10P02R2 is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of the NTMS10P02R2 is -55°C~150°C TJ and its maximum power dissipation is 1.6W Ta. NTMS10P02R2 has 8 pins and it is available in Tape & Reel (TR) packaging way.



NTMS10P02R2 Features


  • Ultra Low RDS(on)

  • Higher Efficiency Extending Battery Life

  • Logic Level Gate Drive

  • Miniature SOIC?8 Surface Mount Package

  • Diode Exhibits High Speed, Soft Recovery

  • Avalanche Energy Specified

  • SOIC?8 Mounting Information Provided

  • Pb?Free Package is Available



NTMS10P02R2 Applications


  • Power Management in Portable and Battery?Powered Products

  • Cellular and Cordless Telephones

  • PCMCIA Cards


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